Surface Activated Bonders
Ar Bombardment SAB in UHV
Room temperature bonding of different material after bonding surface (oxidised film..etc) is removed by Ar bombardment.
Vapor Assist
Low temperature bonding for CU-Cu, SiO2-SiO2 in Atmosphere. It is suitable for 3D stacking sensor, logic, memory and chip/wafer level 3D IC
WAP-100
High-Accurate Plasma SAB Bonder
Ar Plasma SAB
Room/Low temperature bonding for Au (Cu) in Atmosphere/Low vacuum. Low temperature and low vacuum of Au. Cu can be bonded within an hour after plasma process.
Sequential Plasma
Low temperature bonding for Si, SiO2, Glass. After O2 Plasma and N2 Radical process, low temperature bonding of Si-Si…etc in Atmospheric condition.
WP-100
Sequential-plasma/Hybrid bonding